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Growth and Integration of Epitaxial Gallium Nitride Films with Silicon-Based Devices

A novel method to effectively grow and integrate epitaxial films of GaN on a silicon substrate

Published: 21st February 2022
Growth and Integration of Epitaxial Gallium Nitride Films with Silicon-Based Devices
Quardia Inc., stock.adobe.com
Patents
  • This technology is protected and described by US7803717B2
IP Status
  • Patent application submitted